October 11, 2015

ST UA741 - the opamp : weekend die-shot

µA741 was the first "usable", widespread solid state opamp, mainly due to integrated capacitor for frequency correction (which we now take for granted in general-purpose opamps). This chip was reimplemented numerous times since 1968, like this ST UA741 in 2001. You can also take a look at historic schematic of µA741 here.

Die size 1073x993 µm.

September 26, 2015

Diodes BC847BS - matched BJT pair : weekend die-shot

Diodes Incorporated BC847BS - pair of npn transistors with matched hFE. Internally it has 2 separate dies.
Die size 306x306 µm.

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September 24, 2015

TL431 - adjustable shunt regulator : weekend die-shot

TL431 is another adjustable shunt regulator often used in linear supplies with external power transistor.
Die size 592x549 µm.

August 18, 2015
August 10, 2015

LM319M : weekend die-shot

LM319M - "high speed" (80ns) dual comparator.
Die size 2017x700 µm.

July 11, 2015

Mikron 1663RU1 - first Russian 90nm chip : weekend die-shot

Mikron is currently the most advanced microelectronic fab in Russia, located in Zelenograd. In 2010 they have licensed 90nm technology from STMicroelectronics, and equipment setup was somewhat ready by the end of 2012. Technology transfer was hindered by very small manufacturing volume and scarce funding. Nevertheless, 1663RU1 has became their first 90nm product reached commercial customers. It's 16 Mibit SRAM chip.

There are no redundancy or ECC correction on this chip, bulk-Si technology ("civilian" technology). There are no radiation-hardening tricks implemented. This chip is apparently intended for industrial/military applications, use in space is only possible with great care.

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June 29, 2015

BFG135 - NPN 7GHz RF BJT transistor : weekend die-shot

BFG135 - 7GHz RF NPN transistor with integrated emitter-ballasting resistors. Transistor is so sparse to lower thermal (mainly) and collector resistance.
Die size 668x538 µm, transistor fin halfpitch - 800nm.

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