ZeptoBars - RSS feed http://zeptobars.ru/en/ Microelectronics. Die-shots. Artificial intelligence. Lasers. en-us Tue, 10 Jun 2006 04:00:00 GMT Mon, 08 Feb 16 10:51:51 +0300 webmaster@zeptobars.ru 120 10 <![CDATA[Noname TL431 : weekend die-shot]]> http://zeptobars.ru/en/read/Noname-TL431-TL431AIDBZR Die size 730x571 µm.


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Wed, 03 Feb 16 08:50:37 +0300
<![CDATA[Dallas Semiconductor DS1000Z : weekend die-shot]]> http://zeptobars.ru/en/read/Dallas-semiconductor-ds1000z Die size 2074x1768 µm.


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Mon, 21 Dec 15 12:48:18 +0300
<![CDATA[Infineon BFR740 - 42GHz BJT : weekend die-shot]]> http://zeptobars.ru/en/read/Infineon-BFR740-42GHz-BJT-npn Die size 305x265 µm.



After metal etch we can see that it's not that simple:


Main active area (scale 1px = 57nm):



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Tue, 10 Nov 15 08:18:27 +0300
<![CDATA[AD603 - 90 MHz Variable Gain Amplifier : weekend die-shot]]> http://zeptobars.ru/en/read/AD603-Variable-Gain-Amplifier-RF-VGA

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Mon, 26 Oct 15 10:35:02 +0300
<![CDATA[CHANGJIANG MMBT2222A - npn BJT transistor : weekend die-shot]]> http://zeptobars.ru/en/read/CHANGJIANG-MMBT2222A-npn-bjt-transistor OnSemi MMBT2222A CHANGJIANG MMBT2222A has both smaller die size and simpler layout (BC847-like) - which should cause significantly lower hFE on high collector currents.

Die size 234x234 µm.


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Mon, 26 Oct 15 10:26:07 +0300
<![CDATA[Linear LT1021-5 ±0.05% precision reference : weekend die-shot]]> http://zeptobars.ru/en/read/Linear-LT1021-precision-reference-zener Die size 2354x1364 µm.


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Mon, 19 Oct 15 11:05:10 +0300
<![CDATA[Phillips BC847C - npn BJT transistor : weekend die-shot]]> http://zeptobars.ru/en/read/Phillips-BC847C-npn-BJT-transistor

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Mon, 19 Oct 15 10:54:01 +0300
<![CDATA[ST UA741 - the opamp : weekend die-shot]]> http://zeptobars.ru/en/read/ST-UA741-opamp-operational-amplifier historic schematic of µA741 here.

Die size 1073x993 µm.


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Sun, 11 Oct 15 20:32:36 +0300
<![CDATA[Diodes BC847BS - matched BJT pair : weekend die-shot]]> http://zeptobars.ru/en/read/diodes-BC847BS-matched-pair-bjt-npn Die size 306x306 µm.



Second die:


Lithography repeatability is definitely better than this. Parameter matching is likely achieved by using adjacent dies from the wafer. 2 dies are used because one cannot place 2 BC847 transistors on the same die without significant changes to the technology (and it won't be BC847 anymore) - die bulk is transistor terminal.

Difference between the dies. Top metal is quite non-uniform optically (as usual) over the area, but this is unlikely to cause any electrical characteristics impact. Would be interesting to make similar difference photo for non-matched transistors.

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Sat, 26 Sep 15 16:22:39 +0300
<![CDATA[TL431 - adjustable shunt regulator : weekend die-shot]]> http://zeptobars.ru/en/read/TL431-adjustable-shunt-regulator-linear-supply another adjustable shunt regulator often used in linear supplies with external power transistor.
Die size 592x549 µm.


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Thu, 24 Sep 15 16:34:08 +0300